中文
The core application of diamond wire in the photovoltaic industry is silicon wafer cutting, which involves high-precision cutting of photovoltaic grade silicon rods (monocrystalline silicon/polycrystalline silicon) into silicon wafers with a thickness of only 160-220 μ m. It is a key process in the "silicon material silicon rod silicon wafer" link of the photovoltaic industry chain.
The specific application advantages and scenarios are as follows:
Core advantages: Compared with traditional mortar cutting, the cutting efficiency is greatly improved, silicon material loss is reduced, and the surface flatness of the cut silicon wafer is higher, directly reducing the cost and difficulty of subsequent battery cell production.
Mainstream scenario: Covering the cutting of monocrystalline silicon rods and polycrystalline silicon ingots. Currently, diamond wire is used for 100% cutting of monocrystalline silicon wafers in the industry, and polycrystalline silicon wafer cutting is gradually being replaced.
Product Specifications
Product Specifications | wire diameter/um | Blade rate | Breaking force/N | Product Usage |
20Tungsten wire electroplated with diamond wire | 38±2 | 120±60 | ≥4.0 | Monocrystalline silicon cutting |
22Tungsten wire electroplated with diamond wire | 40±2 | 120±60 | ≥4.3 | Monocrystalline silicon cutting |
24Tungsten wire electroplated with diamond wire | 42±2 | 120±60 | ≥4.8 | Monocrystalline silicon cutting |
26Tungsten wire electroplated with diamond wire | 44±2 | 120±60 | ≥5.4 | Monocrystalline silicon cutting |
28Tungsten wire electroplated with diamond wire | 46±2 | 120±60 | ≥6.0 | Monocrystalline silicon cutting |
26Tungsten wire electroplated with diamond wire | 43±2 | 120±60 | ≥4.3 | Monocrystalline silicon cutting |
28Tungsten wire electroplated with diamond wire | 45±2 | 120±60 | ≥4.9 | Monocrystalline silicon cutting |
30Tungsten wire electroplated with diamond wire | 47±2 | 120±60 | ≥5.5 | Monocrystalline silicon cutting |
32Tungsten wire electroplated with diamond wire | 49±2 | 120±60 | ≥5.8 | Monocrystalline silicon cutting |
34Tungsten wire electroplated with diamond wire | 51±2 | 120±60 | ≥6.0 | Monocrystalline silicon cutting |
36Tungsten wire electroplated with diamond wire | 53±2 | 120±60 | ≥6.5 | Monocrystalline silicon cutting |
0.30Electroplated diamond wire | 305±20 | 50±10 | ≥145 | Silicon crystal cutting |
0.35Electroplated diamond wire | 345±20 | 50±10 | ≥160 | Silicon crystal cutting |
0.40Electroplated diamond wire | 390±20 | 70±10 | ≥230 | Silicon crystal cutting |
0.42Electroplated diamond wire | 450±20 | 70±10 | ≥270 | Silicon crystal cutting |
❊ Customization can be developed according to processing and usage requirements
ICP：湘ICP备2025139849号-1 
